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t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 1 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com p ad configuration p ad no. symbol 1 , 5 v g 2 , 4, 7, 9 gnd 3 rf in 6, 10 v d 8 rf out applications ? weather and marine r a dar general description triquints tga2622 - cp is a packaged , high power x - b and a mplifier fabricated on triquint s tqgan25 0.25 um gan on sic production process . o perat ing from 9 C 10 ghz , the tga2622 - cp achieves 35 w saturated output powers , a power - added efficiency of greater than 43 % , and power gain of 27.5 db . the tga2622 - cp is packaged in a 10 - lead 15x15 mm bolt - down package with a cu base for superior thermal management. it can support a range of bias voltages and performs well under both pulsed and cw conditions. both rf ports are internally dc blocked and matched to 50 ohms allowing for simple system integration. the tga2622 - cp is ideally suited for both commercial and defense app lications. lead - fr ee and rohs compliant. evaluation boards are available upon request. ordering information part eccn description tga2 622 - cp 3 a001.b.2.b 9 C 10 ghz 35 w gan power amplifier product features ? frequency range: 9 C 10 ghz ? p sat : 4 5.5 dbm @ p in = 18 dbm ? pae : > 4 3 % @ p in = 18 dbm ? power gain: 27.5 db @ p in = 18 dbm ? bias : v d = 28 v , i dq = 290 ma , v g = - 2. 7 v typical ( pulsed v d : pw = 100 u s and dc = 10 % ) ? package dimensions: 15.2 x 15.2 x 3.5 mm ? package base is pure cu offering superior thermal management functional block diagram 6 7 8 9 10 5 4 3 2 1
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 2 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 4 0 v gate voltage range (v g ) - 8 to 0 v drain current (i d ) 4 . 3 a gate current (i g ) - 11 to 45 ma (1) power dissipation (p diss ) , 85c , cw 107 w input power (p in ) , cw, 50, v d = 28v, 85c 24 dbm input power (p in ) , cw, vswr 3 :1, v d = 28 v, 85c 24 dbm channel t emperature (t ch ) 275 c mounting temperature (30 s econds) 260 c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. notes: (1) max rating for i g is at channel temperature (t ch ) of 200 c recommended operating conditions parameter value drain voltage (v d ) : pulsed 28 v drain current (i d q ) 29 0 m a drain current under rf drive (i d_drive ) see plots p. 6 gate voltage (v g ) - 2.7 v (typ.) gate current under rf drive (i g _drive ) see plots p. 6 temperature (t base ) - 40 to 85 c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 28 v, i d q = 29 0 m a, v g = - 2. 7 v typical , pulsed v d : pw = 100 u s, dc = 10 % parameter min typical max units operational frequency range 9 10 ghz small signal gain 3 0 db input return loss > 1 1 db output return loss > 8 db output power (pin = 18 dbm) 4 5.5 db m power added efficiency (pin = 18 dbm) > 4 3 % power gain (pin = 18dbm) 27.5 db outp ut power temperature coefficient pulsed ( calculated from 25 c to 85 c ) cw - 0.01 9 - 0.0 23 dbm/ c recommended operating voltage: 2 0 28 32 v
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 3 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) v d = 28 v, i dq = 290 ma, ( pulsed v d : pw = 100 us, dc = 10 %) , t base = 85 c , v d = 28 v , i d _drive = 3.2 a, p in = 20 dbm, p out = 45.6 dbm, p diss = 52 w 1.15 oc/w channel temperature (t ch ) (under rf drive) 145 c median lifetime (t m ) 3.07 x 10^10 hrs thermal resistance ( jc ) (1) cw , v d = 28 v, i dq = 290 ma, t base = 85 c , v d = 28 v , i d _drive = 2.7 a, p in = 20 dbm, p out = 44.8 dbm, p diss = 45 w 1.78 oc/w channel temperature (t ch ) (under rf drive) 166 c median lifetime (t m ) 3.21 x 10^8 hrs notes: 1. thermal resistance m easured to back of package. test conditions: v d = 40 v; failure criteria = 10% reduction in i d_max 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 13 0 10 20 30 40 50 60 8.5 9 9.5 10 10.5 p diss (w) frequency (ghz) p diss vs. frequency vs. t base -40c +25c +85c p in = 18dbm v d = 28v; i dq = 290ma pulsed: pw=100us, dc=10% 0 10 20 30 40 50 60 8.5 9 9.5 10 10.5 p diss (w) frequency (ghz) p diss vs. frequency vs. t base -40c +25c +85c p in = 18dbm v d = 28v; i dq = 290ma cw 0.5 1.0 1.5 2.0 2.5 10 20 30 40 50 60 70 80 r jc (c/w) p diss (w) thermal resistance vs. p diss cw pulsed t base = +85 c pulsed: pw=100us, dc=10%
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 4 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal ( pulse d opera tion ) 40 41 42 43 44 45 46 47 8.5 9 9.5 10 10.5 p out (dbm) frequency (ghz) output power vs. frequency vs. v d vd=25v vd=28v vd=30v p in = 18dbm temp. = +25 c i dq = 290ma pulsed: pw=100us, dc=10% 40 41 42 43 44 45 46 47 8.5 9 9.5 10 10.5 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. -40c +25c +85c p in = 18dbm v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% 40 41 42 43 44 45 46 47 8.5 9 9.5 10 10.5 p out (dbm) frequency (ghz) output power vs. freq vs. input power 16dbm 17dbm 18dbm 19dbm 20dbm temp. = +25 c v d = 28 v, i dq = 290 ma pulsed: pw=100 us, dc=10% 40 41 42 43 44 45 46 47 8.5 9 9.5 10 10.5 p out (dbm) frequency (ghz) output power vs. frequency vs. i dq 290ma 725ma p in = 18dbm temp. = +25 c v d = 28v pulsed: pw=100us, dc=10% 31 33 35 37 39 41 43 45 47 2 4 6 8 10 12 14 16 18 20 p out (dbm) input power (dbm) output power vs. input power vs. i dq 290 ma 725 ma temp. = +25 c freq. = 9.5 ghz pulsed: pw=100us, dc=10% v d = 28v 26 29 32 35 38 41 44 47 2 4 6 8 10 12 14 16 18 20 p out (dbm) input power (dbm) output power vs. input power vs. temp. -40c +25c +85c v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% freq. = 9.5ghz
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 5 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal (pulsed operation) 25 30 35 40 45 50 55 8.5 9 9.5 10 10.5 pae (%) frequency (ghz) pae vs. frequency vs. temperature -40c +25c +85c p in = 18dbm v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% 23 24 25 26 27 28 29 30 8.5 9 9.5 10 10.5 power gain (db) frequency (ghz) power gain vs. frequency vs. temp. -40c +25c +85c p in = 18dbm v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% 23 24 25 26 27 28 29 30 8.5 9 9.5 10 10.5 power gain (db) frequency (ghz) power gain vs. frequency vs. v d vd=25v vd=28v vd=30v p in = 18dbm temp. = +25 c i dq = 290ma pulsed: pw=100us, dc=10% 25 30 35 40 45 50 55 8.5 9 9.5 10 10.5 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=25v vd=28v vd=30v p in = 18dbm temp. = +25 c i dq = 290ma pulsed: pw=100us, dc=10% 19 22 25 28 31 34 37 40 2 4 6 8 10 12 14 16 18 20 gain (db) input power (dbm) power gain vs. input power vs. temp. -40c +25c +85c freq. = 9.5 ghz v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% 0 10 20 30 40 50 60 2 4 6 8 10 12 14 16 18 20 pae (%) input power (dbm) pae vs. input power vs. temp. -40c +25c +85c freq. = 9.5 ghz v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10%
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 6 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal (pulsed operation) 500 1000 1500 2000 2500 3000 3500 4000 8.5 9 9.5 10 10.5 drain current (ma) frequency (ghz) drain current vs. frequency vs. v d vd=25v vd=28v vd=30v p in = 18dbm temp. = +25 c i dq = 290ma pulsed: pw=100us, dc=10% -2 0 2 4 6 8 10 8.5 9 9.5 10 10.5 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d vd=25v vd=28v vd=30v p in = 18dbm temp. = +25 c i dq = 290ma pulsed: pw=100us, dc=10% 500 1000 1500 2000 2500 3000 3500 8.5 9 9.5 10 10.5 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. -40c +25c +85c p in = 18dbm v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% -5 0 5 10 15 20 25 30 8.5 9 9.5 10 10.5 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. -40c +25c +85c p in = 18dbm v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% -5 0 5 10 15 20 25 30 35 40 2 4 6 8 10 12 14 16 18 20 gate current (ma) input power (dbm) gate current vs. input power vs. temp. -40c +25c +85c freq. = 9.5 ghz v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10% 500 1000 1500 2000 2500 3000 3500 2 4 6 8 10 12 14 16 18 20 drain current (ma) input power (dbm) drain current vs. input power vs. temp. -40c +25c +85c freq. = 9.5 ghz v d = 28v, i dq = 290ma pulsed: pw=100us, dc=10%
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 7 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal ( cw operation ) 40 41 42 43 44 45 46 47 8.5 9 9.5 10 10.5 p out (dbm) frequency (ghz) output power vs. frequency vs. v d vd=25v vd=28v vd=30v p in = 18dbm temp. = +25 c i dq = 290ma cw 40 41 42 43 44 45 46 47 8.5 9 9.5 10 10.5 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. -40c +25c +85c p in = 18dbm v d = 28v, i dq = 290ma cw 40 41 42 43 44 45 46 47 8.5 9 9.5 10 10.5 p out (dbm) frequency (ghz) output power vs. freq vs. input power 16dbm 17dbm 18dbm 19dbm 20dbm temp. = +25 c v d = 28 v, i dq = 290 ma cw 40 41 42 43 44 45 46 47 8.5 9 9.5 10 10.5 p out (dbm) frequency (ghz) output power vs. frequency vs. i dq 290ma 725ma p in = 18dbm temp. = +25 c v d = 28v cw 31 33 35 37 39 41 43 45 47 2 4 6 8 10 12 14 16 18 20 p out (dbm) input power (dbm) output power vs. input power vs. i dq 290 ma 725 ma temp. = +25 c v d = 28v cw 26 29 32 35 38 41 44 47 2 4 6 8 10 12 14 16 18 20 p out (dbm) input power (dbm) output power vs. input power vs. temp. -40c +25c +85c freq. = 9.5 ghz v d = 28v, i dq = 290ma cw
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 8 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal (cw operation) 25 30 35 40 45 50 55 8.5 9 9.5 10 10.5 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=25v vd=28v vd=30v p in = 18dbm temp. = +25 c i dq = 290ma cw 23 24 25 26 27 28 29 30 8.5 9 9.5 10 10.5 power gain (db) frequency (ghz) power gain vs. frequency vs. v d vd=25v vd=28v vd=30v p in = 18dbm temp. = +25 c i dq = 290ma cw 25 30 35 40 45 50 55 8.5 9 9.5 10 10.5 pae (%) frequency (ghz) pae vs. frequency vs. temperature -40c +25c +85c p in = 18dbm v d = 28v, i dq = 290ma cw 23 24 25 26 27 28 29 30 8.5 9 9.5 10 10.5 power gain (db) frequency (ghz) power gain vs. frequency vs. temp. -40c +25c +85c p in = 18dbm v d = 28v, i dq = 290ma cw 22 24 26 28 30 32 34 36 38 2 4 6 8 10 12 14 16 18 20 power gain (db) frequency (ghz) power gain vs. input power vs. temp. -40c +25c +85c freq. = 9.5 ghz v d = 28v, i dq = 290ma cw 0 10 20 30 40 50 60 2 4 6 8 10 12 14 16 18 20 pae (%) frequency (ghz) pae vs. input power vs. temperature -40c +25c +85c freq. = 9.5 ghz v d = 28v, i dq = 290ma cw
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 9 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal (cw operation) 500 1000 1500 2000 2500 3000 3500 8.5 9 9.5 10 10.5 drain current (ma) frequency (ghz) drain current vs. frequency vs. v d vd=25v vd=28v vd=30v p in = 18dbm temp. = +25 c i dq = 290ma cw 500 1000 1500 2000 2500 3000 3500 8.5 9 9.5 10 10.5 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. -40c +25c +85c p in = 18dbm v d = 28v, i dq = 290ma cw -5 0 5 10 15 20 25 30 8.5 9 9.5 10 10.5 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d vd=25v vd=28v vd=30v p in = 18dbm temp. = +25 c i dq = 290ma cw -5 0 5 10 15 20 25 30 8.5 9 9.5 10 10.5 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. +25c +85c p in = 18dbm v d = 28v, i dq = 290ma cw -1 0 1 2 3 4 5 2 4 6 8 10 12 14 16 18 gate current (ma) frequency (ghz) gate current vs. input power vs. temp. +25c +85c freq. = 9.5 ghz v d = 28v, i dq = 290ma cw 0 500 1000 1500 2000 2500 3000 3500 2 4 6 8 10 12 14 16 18 20 drain current (ma) frequency (ghz) drain current vs. input power vs. temp. -40c +25c +85c freq. = 9.5 ghz v d = 28v, i dq = 290ma cw
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 10 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : linearity -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. i dq freq. = 9.5ghz, 1mhz tone spacing temp. = +25 c v=28v, i dq =290ma v=28v, i dq =725ma -80 -70 -60 -50 -40 -30 -20 -10 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. i dq freq. = 9.5ghz, 1mhz tone spacing temp. = +25 c v=28v, i dq =290ma v=28v, i dq =725ma -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency 9.0ghz 9.5ghz 10.0ghz v d = 28v, i dq = 290ma, 1mhz tone spacing temp. = +25 c -80 -70 -60 -50 -40 -30 -20 -10 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency 9.0ghz 9.5ghz 10.0ghz v d = 28v, i dq = 290ma, 1mhz tone spacing temp. = +25 c -50 -45 -40 -35 -30 -25 -20 9 9.2 9.4 9.6 9.8 10 2f 0 output power (dbc) frequency (ghz) 2 nd harmonic vs. frequency vs. p in 10dbm 18dbm v d = 28v, i dq = 290ma temp. = +25 c -90 -80 -70 -60 -50 -40 -30 9 9.2 9.4 9.6 9.8 10 3f 0 output power (dbc) frequency (ghz) 3rd harmonic vs. frequency vs. p in 10dbm 18dbm v d = 28v, i dq = 290ma temp. = +25 c
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 11 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: small signal -30 -25 -20 -15 -10 -5 0 8.5 9 9.5 10 10.5 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. -40c +25c +85c v d = 28 v, i dq = 290ma -30 -25 -20 -15 -10 -5 0 8.5 9 9.5 10 10.5 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. -40c +25c +85c v d = 28 v, i dq = 290ma 15 18 21 24 27 30 33 36 39 8.5 9 9.5 10 10.5 s21 (db) frequency (ghz) gain vs. frequency vs. i dq 290ma 725ma temp. = +25 c v d = 28v 15 18 21 24 27 30 33 36 39 8.5 9 9.5 10 10.5 s21 (db) frequency (ghz) gain vs. frequency vs. temperature -40c +25c +85c v d = 28 v, i dq = 290ma -30 -25 -20 -15 -10 -5 0 8.5 9 9.5 10 10.5 s11 (db) frequency (ghz) input return loss vs. freq. vs. i dq 290 ma 725 ma v d = 28 v -30 -25 -20 -15 -10 -5 0 8.5 9 9.5 10 10.5 s22 (db) frequency (ghz) output return loss vs. freq. vs. i dq 290 ma 725 ma v d = 28 v
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 12 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com application circuit notes: 1. v g must be biased from both side s (pins 1 and 5) 2. v d must be biased from both sides (pins 6 and 10) bias - up procedure 1. set power supply: i d limit to 3. 5 a, i g limit to 25 ma 2. apply - 5.0 v to v g (for pinch - off) 3. increase v d to +28 v; ensure i d q is approx. 0 ma 4. adjust v g more positive until i dq = 290 m a v g ~ - 2.7 v typ 5. apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to ?5.0 v; ensure i dq ~ 0 ma 3. reduce v d to 0 v 4 . turn off v d supply 5 . turn off v g supply pin description p in n o. symbol description 1,5 v g gate voltage; bias network is required; must be biased from both sides; see recommended application information above. 3 rf in output; matched to 50 ; dc blocked 2,4,7,9 gnd must be grounded on the pcb. 6,10 v d drain voltage ; bias network is required; must be biased from both sides; see recommended application information above. 8 rf out input; matched to 50 ; dc blocked rf out rf in v d (note 2) v g (note 1) c1 c5 0.1 uf 10-47uf 10-47uf c6 c2 0.1 uf r1 10 ohms r2 10 ohms r5 10 ohms r6 10 ohms c7 0.01 uf c8 0.01 uf
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 13 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board layout bill of material reference des. value description manuf. part number c1, c 2 0.1 f cap, 0402 , 50 v, 10%, x7r various c 5 , c 6 1 0 - 47 f cap, 1206, 50 v, 20%, x5 r (10 v is ok) various c7 , c 8 0.01 f cap, 0402 , 50 v, 10%, x7 r various r1, r2, r5, r6 10 ohms res, 0 402, 50 v, 5% various r3, r4 0 ohms res, 0402 , jumper s required for the above evb various notes: both top and bottom v d and v g must be biased.
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 14 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly notes 1. clean the board or module with alcohol. allow it to dry fully. 2. nylock screws are recommended for mounting the tga262 2 - cp to the board. 3. to improve the thermal and rf performance, we recommend the following: a. apply thermal compound or 4 mils indium shim b etween the package and the board. b. attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim between the heat sink and the board. 4. apply solder to each pin of the tga262 2 - cp. 5. clean the assembly with alcohol. mechanical information units: inches tolerances: unless specified x.xx = 0.01 ; x.xxx = 0.005 materials: base: copper lead: alloy 194 lid: lcp (liquid crystal polymer) all metalized features are gold plated part is epoxy sealed marking: 262 2 : part number yy: part assembly year ww: part assembly week zzz: serial number mxxx: batch id
t ga2622 - cp 9 C 10 ghz 35 w gan power amplifier preliminary datasheet: rev - 1 1 - 03 - 14 - 15 of 15 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change witho ut notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent r ights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving , or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability compatible with the latest version of j - std - 020, lead - free solder, 260c rohs compliance this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level 5a at +260 c convection reflow t he part is rated moisture sensitivity level 5a at 260c per j jedec standard ipc/jedec j - std - 020 eccn us department of commerce : 3 a001.b.2.b

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